f.e.c. semiconductor iii. fast / ultra fast / super fast recovery rectifier 5.0a surface mount super fast recovery rectifier es5ab~es5jb (package: smb (do-214aa)) features for surface mounted applications. glass passivated junction chip. built-in strain relief, ideal for automated placement. plastic material used carries underwriters laboratory flammability classification 94v-0. super fast recovery for high efficiency. high temperature soldering : 250j/10 seconds at terminals. mechanical data case : molded plastic terminals : solder plated polarity : indicated by cathode band w eight : 0.090 grams case: smb dimensions in inches and (millimetres) ratings & electrical characteristics characteristics symbol es5ab es5bb ES5CB es5db es5eb es5gb es5jb units maximum recurrent peak reverse voltage v rrm 50 100 150 200 300 400 600 volts maximum rms voltage v rms 35 70 105 140 210 280 420 volts maximum dc blocking voltage v dc 50 100 150 200 300 400 600 volts maximum average forward rectified current see f ig. 1 @t l =75 j io 5.0 amps peak forward surge current 8.3ms single half sine-wave superimposed on rated load. (jedec method) i fsm 150 amps maximum instantaneous forward voltage @ 5.0 a v f 0.95 1.30 1.70 volts maximum dc reverse current @ta =25 j at rated dc blocking voltage @ta =100 j i r 10 300 a max imum reverse recovery time (note 1) trr 35 ns typical junction cap acitance (note 2) cj 58 p f typical thermal resistance rth-ja 47 j/w operating temperature range tj -65 to +150 j storage temperature range tstg -65 to +150 j notes: 1. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 2. measured at 1.0 mhz and applied v r =4.0v. 1 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) 0.185 (4.70) 0.220 (5.59) 0.160 (4.06) 0.180 (4.57) 0.084 (2.13) 0.096 (2.44) 0.130 (3.30) 0.155 (3.94) 0.083 (2.11) 0.075 (1.90) max. free datasheet http:///
f.e.c. semiconductor ratings and characteristic curves of es5ab~es5jb 2 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 150 120 90 60 30 0 0.1 1.0 10 100 0.01 0.1 1 10 100 100 10 1 0.1 reverse voltage,volts t,pulse duration,sec. fig. 5-typical junction capacitance fig. 6-typical transient thermal impedance fig. 3-typical instantaneous forward characteristics number of cycles at 60 hz fig. 2-maximum non-repetitive peak forward surge current fig. 1- forward current derating curve ,tnerruc deifitcer drawrof egareva s er ep ma drawrof suoenatnatsni serepma,tnerruc fp ,ecnaticapac noitcnuj ,tnerruc egrus drawrof kaep serepma instantaneous forward voltage, volts single phase half wave 60hz resistive or inductive load 1 10 100 t j =25 c 1 10 100 200 0 20 40 60 80 100 1,000 100 10 1 0.1 0.01 tj=100 c tj=25 c percentage of peak reverse voltage,% fig. 4-typical reverse characteristics ,tnerruc esrever suoenatnatsni ser ep ma orcim ,ecnadepmi lamreht tneisnart w /c ambient temperature, c 0 0.4 0.8 1.2 1.6 1.8 0.01 0.1 1 20 10 es5-es5d es5e-es5j t j =25 c pulse width=300 s 1%duty cycle 8.3ms single half sine-wave (jedec method) free datasheet http:///
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